Search results for "Si nanostructures"

showing 2 items of 2 documents

Enhanced light scattering in Si nanostructures produced by pulsed laser irradiation

2013

An innovative method for Si nanostructures (NS) fabrication is proposed, through nanosecond laser irradiation (lambda = 532 nm) of thin Si film (120 nm) on quartz. Varying the laser energy fluences (425-1130 mJ/cm(2)) distinct morphologies of Si NS appear, going from interconnected structures to isolated clusters. Film breaking occurs through a laser-induced dewetting process. Raman scattering is enhanced in all the obtained Si NS, with the largest enhancement in interconnected Si structures, pointing out an increased trapping of light due to multiple scattering. The reported method is fast, scalable and cheap, and can be applied for light management in photovoltaics. (C) 2013 AIP Publishin…

Innovative methodMaterials sciencePhysics and Astronomy (miscellaneous)Settore ING-INF/01 - ElettronicaLight scatteringQuartz SiliconSettore FIS/03 - Fisica Della Materialaw.inventionsymbols.namesakeLight managementSi nanostructures NanostructurelawDewetting proceLaser energieDewettingThin filmbusiness.industryScatteringIsolated clusterLaserInterconnected structureSemiconductorsymbolsOptoelectronicsbusinessRaman spectroscopyPhotovoltaicRaman scattering
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Memory cell structure integrated on semiconductor

2004

This invention relates to a memory cell Which comprises a capacitor having a ?rst electrode and a second electrode separated by a dielectric layer. Such dielectric layer com prises a layer of a semi-insulating material Which is fully enveloped by an insulating material and in Which an electric charge is permanently present or trapped therein. Such electric charge accumulated close to the ?rst or to the second electrode, depending on the electric ?eld betWeen the electrodes,therebyde?ningdifferentlogiclevels.

NULLMemory cellSi nanostructuresSilicon rich oxideSettore ING-INF/01 - ElettronicaCMOS technologynon volatile memories
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